1 FMC16N60E fuji power mosfet super fap-e 3 series n-channel silicon power mosfet features maintains both low power loss and low noise lower r ds (on) characteristic more controllable switching dv/dt by gate resistance smaller v gs ringing waveform during switching narrow band of the gate threshold volta ge (3.0 0. 5v) high avalanche durability applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristics absolute maximum ratings at tc=25 c (unless otherwise speci?ed) description symbol characteristics unit remarks drain-source voltage v ds 6 00 v v dsx 6 00 v v gs = -30v continuous drain current i d 1 6 a pulsed drain current i dp 64 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum avalanche current i ar 16 a note*1 non-repetitive maximum avalanche energy e as 554.8 mj note*2 repetitive maximum avalanche energy e ar 27 mj note*3 peak diode recovery dv/dt dv/dt 5.2 kv/ s note*4 peak diode recovery -di/dt -di/dt 100 a/ s note*5 maximum power dissipation p d 2.16 w ta=25 c 270 tc=25 c operating and storage temperature range t ch 150 c t stg -55 to + 150 c outline drawings [mm] e quivalent circuit schematic electrical characteristics at tc=25 c (unless otherwise speci?ed) description symbol conditions min. typ. max. unit drain-source breakdown voltage bv ds s i d =250 a, v gs =0v 6 00 - - v gate threshold voltage v gs (th) i d =250 a, v ds =v gs 2.5 3.0 3.5 v zero gate voltage drain current i dss v ds =600v, v gs =0v t ch =25c - - 25 a v ds =480v, v gs =0v t ch =125c - - 250 gate-source leakage current i g ss v gs = 30v, v ds =0v - 10 100 n a drain-source on-state resistance r ds (on) i d =8a, v gs =10v - 0.40 0.47 ? forward transconductance g fs i d =8a, v ds =25v 10 20 - s input capacitance ciss v ds =25v v gs =0v f=1mhz - 2650 3980 pf output capacitance coss - 230 345 reverse transfer capacitance crss - 17 25.5 turn-on time td(on) v cc =300v v gs =10v i d =8a r gs =1 0 ? - 22 33 ns tr - 10 15 turn-off time td(off) - 120 180 tf - 20 30 total gate charge q g v cc =300v i d =16a v gs =10v - 76 114 nc gate-source charge q gs - 17 25.5 gate-drain charge q gd - 22 33 avalanche capability i av l=1.74mh, t ch =25c 16 - - a diode forward on-voltage v sd i f =16a, v gs =0v, t c h =25c - 0.90 1.35 v reverse recovery time trr i f =16a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr - 9 - c note *1 : tch 150c note *2 : stating tch=25c, i as =7a, l=20.8mh, vcc=60v, r g =50 ? e as limited by maximum channel temperature and avalanche current. see to 'avalanche energy' graph. ther mal characteristics description symbol test conditions min. typ. max. unit thermal resistance rth (ch-c) channel to case 0.460 c/w rth (ch-a) channel to ambient 62 .0 c/w gate(g) source(s) drain(d) note *3 : repetitive rating : pulse width limited by maximum channel temperature. see to the 'transient themal impeadance' graph . note *4 : i f -i d , -di/dt=100a/ s, vcc bv dss , tch 150c. note *5 : i f -i d , dv/dt=5.2kv/ s, vcc bv dss , tch 150c. t -pac k( s )
2 fm c 16n60e 2 fuji power mosfet c 0 4 8 1 2 1 6 2 0 2 4 0 1 0 2 0 3 0 4 0 i d [ a ] v d s [ v ] t y p i c a l o u t p u t c h a r a c t e r i s t i c s i d = f ( v d s ) : 8 0 s pu l s e t e s t, t c h = 2 5 c 2 3 4 5 6 7 0 . 1 1 1 0 1 0 0 i d [ a ] v g s [ v ] t y p i c a l t r a n s f e r c h a r a c t e r i s t i c i d = f ( v g s ) : 8 0 s p u l s e t e s t, v d s = 25 v , t c h = 2 5 c 0 . 1 1 1 0 10 0 0 . 1 1 1 0 10 0 g f s [ s ] i d [ a ] t y p i c a l t r a n sc on d u c t a n c e g f s = f ( i d ) : 8 0 s p u l s e t e s t, v d s = 25 v , t c h = 2 5 c 0 5 1 0 1 5 2 0 2 5 3 0 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 r d s ( o n ) [ ] i d [ a ] t y p i c a l d r a i n - s o u r c e o n - s t a t e r e s i s t an c e r d s ( o n ) = f ( i d ) : 8 0 s pu l s e t e s t , t c h = 2 5 10 v 5 . 5 v 6 v 5 v v g s = 4 . 5 v 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 2 t p d p o w e r l o s s w a v e f o r m : s qu a r e w a v e f o r m t p d p d p o w e r l o s s w a v e f o r m : s qu a r e w a v e f o r m i d [ a ] v d s [ v ] s a f e o pe r a t i n g ar e a i d = f (v ds ) : d u t y = 0 ( s i ng l e p u l s e ),t c = 2 5c t = 1 s 1 0 s 1 m s 1 0 0 s d . c . 0 2 5 5 0 7 5 10 0 12 5 15 0 0 1 0 0 2 0 0 3 0 0 4 0 0 a ll o w a b l e p o w e r d i s s i pa t i o n p d = f ( t c ) p d [ w ] t c [ c ]
3 3 fuji power mosfet fm c 16n60e - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 12 5 15 0 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 r d s ( o n ) [ ] t c h [ c ] t y p . m a x . d r a i n - s ou r c e o n - s t a t e r e s i s t a n c e r d s ( on ) = f ( t c h ) :i d = 8 a , v g s = 10 v - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 12 5 15 0 0 1 2 3 4 5 6 t y p . m a x . m i n . g a t e t h r e s ho l d v o l t a g e v s . t c h v g s ( t h ) = f ( t c h ) : v d s = v g s ,i d = 25 0 a v g s ( t h ) [ v ] t c h [ c ] 0 2 0 4 0 6 0 8 0 10 0 12 0 0 2 4 6 8 1 0 1 2 1 4 q g [ n c ] t y p i c a l g a t e c h a r g e c h a r a c t e r i s t i c s v g s = f ( q g ) :i d = 16 a , t c h = 2 5 c v g s [ v ] 4 8 0 v 3 0 0 v v c c = 1 2 0 v 0 . 0 0 0 . 2 5 0 . 5 0 0 . 7 5 1 . 0 0 1 . 2 5 1 . 5 0 1 . 7 5 2 . 0 0 0 . 1 1 1 0 1 0 0 i f [ a ] vs d [ v ] i d [ a ] t y p i c a l f o r w a r d c h a r a c t e r i s t i c s o f r e v e r s e d i o d e i f = f ( v s d ) : 8 0 s p u l s e t e s t, t c h = 2 5 c 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 0 1 0 1 1 0 2 1 0 3 t y p i c a l s w i t c h i n g c ha r a c t e r i s t i c s v s . i d t = f ( i d ) : v cc = 3 0 0 v , v g s = 10 v , r g = 1 0 t d ( on ) t r t f t d ( o ff ) t [ n s ] 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 3 1 0 0 1 0 1 1 0 2 1 0 3 1 0 4 c [ p f ] v d s [ v ] t y p i c a l c apa c i t an c e c = f ( v d s ) : v g s = 0 v , f = 1 m h z c r s s c o s s c i s s
4 fm c 16n60e 4 fuji power mosfet 0 2 5 5 0 7 5 1 0 0 12 5 15 0 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 i a s = 7 a i a s = 1 0 a i a s = 1 6 a e a v [ m j ] s t a r t i n g t c h [ c ] m a x i m u m a v a l a n c h e e n e r g y vs . s t a r t i n g t c h e ( a v ) = f ( s t a r t i n g t c h ) : v cc = 6 0 v ,i ( a v ) <= 16 a 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 m a x i m u m t r a n s i e n t t he r m a l i m pe d an c e z t h ( c h - c ) = f ( t ) : d = 0 z t h ( c h - c ) [ c / w ] t [ s e c ]
5 5 fuji power mosfet fm c 16n60e warning 1. this catalog contains the product speci?cations, characteristics, data, materials, and structures as of october 2008. the contents are subject to change without notice for speci?cation changes or other reasons. when using a product listed in this catalog, be sure to obtain the latest speci?cations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric device technology co., ltd. is (or shall be deemed) granted. fuji electric device technology co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric device technology co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, ?re, or other problem if any of the products become faulty. it is recommended to make your design fail-safe, ?ame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric device technology co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traf?c-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2008 by fuji electric device technology co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric device technology co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric device technology co., ltd. or its sales agents before using the product. neither fuji electric device technology co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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